DIODES Incorporated FET, MOSFET Arrays DMN31D5UDAQ-7B

The DMN31D5UDAQ is a dual N-channel enhancement mode MOSFET in an X2-DFN0806-6 package measuring 0.8mm x 0.6mm, designed for high-efficiency power management and signal switching applications. It has a drain-source voltage rating of 30V, continuous drain current of 0.4A at 25°C, and on-resistance values of 1.5Ω at VGS=4.5V, 2.0Ω at VGS=2.5V, and 3.0Ω at VGS=1.8V. The gate threshold voltage ranges from 0.4V to 1.0V. The device features ESD-protected gates, low input capacitance, and fast switching speeds. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. The package is moisture-sensitive level 1, RoHS compliant, and has a total power dissipation of 0.37W with a thermal resistance of 339°C/W.