MOSFET 2N-CH 30V 1A SOT363
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033764-DMN3190LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 320mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1A
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 2nC @ 10V
Max Input Capacitance: 87pF @ 20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 1.3A, 10V
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363
MOSFET 2N-CH 30V 1A SOT363 Product overview: DMN3190LDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3190LDW-7 can be used for catalog matching and distributor lookup.
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1A; On Resistance Rds(on):0.122ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power RoHS Compliant: Yes
MOSFET 2N-CH 30V 1A SOT363
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN3190LDW-7 | 1033764-DMN3190LDW-7 | DMN3190LDW-7DIDKR-ND | 289-DMN3190LDW-7 | 07AH3775 | DMN3190LDW-7 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3190LDW-7 | FET, MOSFET Arrays | 30V 1A MOSFET Transistor | Mosfet, Dual N-Ch, 30V, 1A, Sot363; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| IDSS | 1000 milliamps | 1000 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
