MOSFET 2N-CH 30V 1A SOT363 Product overview: DMN3190LDW-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3190LDW-13 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 1A SOT363
Manufacturer: Diodes Incorporated
Win Source Part Number: 1324723-DMN3190LDW-1
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power - Max: 320mW
Supplier Device Package: SOT-363
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: DMN3190LDW-13DI-ND,D
Base Product Number: DMN3190
RoHS Status: ROHS3 Compliant
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363
MOSFET 2N-CH 30V 1A SOT363
MOSFET, DUAL, N-CH, 30V, 1A ROHS COMPLIANT: YES
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMN3190LDW-13 | DMN3190LDW-13 | 1324723-DMN3190LDW-13 | DMN3190LDW-13DICT-ND | DMN3190LDW-13 | 28AK8569 | DMN3190LDW-13 |
| Product Name | 30V 1A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 320 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
