DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays DMN3190LDW-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1324723-DMN3190LDW-1 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 10,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Power - Max: 320mW Supplier Device Package: SOT-363 Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 6-TSSOP, SC-88, SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 83 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Other Part Number: DMN3190LDW-13DI-ND,D MN3190LDW-13DICT,-DM N3190LDW-13DIDKR,DMN 3190LDW-13DI,-DMN319 0LDW-13DICT,-DMN3190 LDW-13DITR,DMN3190LD W-13DIDKR,DMN3190LDW -13DITR Base Product Number: DMN3190 RoHS Status: ROHS3 Compliant
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1324723-DMN3190LDW-1 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 10,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Power - Max: 320mW Supplier Device Package: SOT-363 Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 6-TSSOP, SC-88, SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 83 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Other Part Number: DMN3190LDW-13DI-ND,D MN3190LDW-13DICT,-DM N3190LDW-13DIDKR,DMN 3190LDW-13DI,-DMN319 0LDW-13DICT,-DMN3190 LDW-13DITR,DMN3190LD W-13DIDKR,DMN3190LDW -13DITR Base Product Number: DMN3190 RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1324723-DMN3190LDW-13 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1324723-DMN3190LDW-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1324723-DMN3190LDW-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1324723-DMN3190LDW-1 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 10,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Power - Max: 320mW Supplier Device Package: SOT-363 Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 6-TSSOP, SC-88, SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 83 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Other Part Number: DMN3190LDW-13DI-ND,D MN3190LDW-13DICT,-DM N3190LDW-13DIDKR,DMN 3190LDW-13DI,-DMN319 0LDW-13DICT,-DMN3190 LDW-13DITR,DMN3190LD W-13DIDKR,DMN3190LDW -13DITR Base Product Number: DMN3190 RoHS Status: ROHS3 Compliant

Manufacturer: Diodes Incorporated
Win Source Part Number: 1324723-DMN3190LDW-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power - Max: 320mW
Supplier Device Package: SOT-363
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: DMN3190LDW-13DI-ND,DMN3190LDW-13DICT,-DMN3190LDW-13DIDKR,DMN3190LDW-13DI,-DMN3190LDW-13DICT,-DMN3190LDW-13DITR,DMN3190LDW-13DIDKR,DMN3190LDW-13DITR
Base Product Number: DMN3190
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
FET, MOSFET Arrays - DMN3190LDW-13 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN3190LDW-13
FET, MOSFET Arrays DMN3190LDW-13
MOSFET 2N-CH 30V 1A SOT363

MOSFET 2N-CH 30V 1A SOT363

Supplier's Site Datasheet
FET, MOSFET Arrays - DMN3190LDW-13DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN3190LDW-13DICT-ND
FET, MOSFET Arrays DMN3190LDW-13DICT-ND
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - DMN3190LDW-13DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN3190LDW-13DITR-ND
FET, MOSFET Arrays DMN3190LDW-13DITR-ND
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - DMN3190LDW-13DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN3190LDW-13DIDKR-ND
FET, MOSFET Arrays DMN3190LDW-13DIDKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363

Buy Now Datasheet
Singapore
30V 1A MOSFET Transistor
289-DMN3190LDW-13
30V 1A MOSFET Transistor 289-DMN3190LDW-13
MOSFET 2N-CH 30V 1A SOT363 Product overview: DMN3190LDW-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3190LDW-13 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 1A SOT363 Product overview: DMN3190LDW-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3190LDW-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant Diodes Inc. - 28AK8569 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant Diodes Inc.
28AK8569
Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant Diodes Inc. 28AK8569
MOSFET, DUAL, N-CH, 30V, 1A ROHS COMPLIANT: YES

MOSFET, DUAL, N-CH, 30V, 1A ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss

MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3190LDW-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN3190LDW-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN3190LDW-13
MOSFET 2N-CH 30V 1A SOT363

MOSFET 2N-CH 30V 1A SOT363

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1324723-DMN3190LDW-13 DMN3190LDW-13 DMN3190LDW-13DICT-ND 289-DMN3190LDW-13 28AK8569 DMN3190LDW-13 DMN3190LDW-13
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays FET, MOSFET Arrays FET, MOSFET Arrays 30V 1A MOSFET Transistor Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant Diodes Inc. MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) TO-3
Packing Method Tape Reel; Reel - TR Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Transistor Technology / Material MOSFET (Metal Oxide)
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