DIODES Incorporated Single FETs, MOSFETs DMN3150LW-7

N-Channel 28V 1.6A (Ta) 350mW (Ta) Surface Mount SOT-323

N-Channel 28V 1.6A (Ta) 350mW (Ta) Surface Mount SOT-323

N-Channel 28V 1.6A (Ta) 350mW (Ta) Surface Mount SOT-323

MOSFET N-CH 28V 1.6A SOT323 Product overview: DMN3150LW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V, 1.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, 1.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3150LW-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 014440-DMN3150LW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Family Name: DMN3150LW
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-323
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 28V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Input Capacitance: 305pF @ 5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 88 mOhm @ 1.6A, 4.5V
Alternative Parts (Cross-Reference): DMN3150LW;
Introduction Date: August 05, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited