DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN313DLT-7 DMN313DLT-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033763-DMN313DLT-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-523 Dimension: SOT-523 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 270mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.5nC @ 4.5V Max Input Capacitance: 36.3pF @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 Ohm @ 10mA, 4V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN313DLT-7 - 1033763-DMN313DLT-7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMN313DLT-7DITR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN313DLT-7DICT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN313DLT-7DIDKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN313DLT-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 0.27A, Sot-523 Rohs Compliant Diodes Inc. - 28AK8567 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033763-DMN313DLT-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-523 Dimension: SOT-523 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 270mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.5nC @ 4.5V Max Input Capacitance: 36.3pF @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 Ohm @ 10mA, 4V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN313DLT-7 - 1033763-DMN313DLT-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN313DLT-7
1033763-DMN313DLT-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN313DLT-7 1033763-DMN313DLT-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033763-DMN313DLT-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-523 Dimension: SOT-523 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 270mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.5nC @ 4.5V Max Input Capacitance: 36.3pF @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 Ohm @ 10mA, 4V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033763-DMN313DLT-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-523
Dimension: SOT-523
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 270mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.5nC @ 4.5V
Max Input Capacitance: 36.3pF @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 10mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - DMN313DLT-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN313DLT-7DITR-ND
Single FETs, MOSFETs DMN313DLT-7DITR-ND
N-Channel 30V 270mA (Ta) 280mW (Ta) Surface Mount SOT-523

N-Channel 30V 270mA (Ta) 280mW (Ta) Surface Mount SOT-523

Buy Now Datasheet
Single FETs, MOSFETs - DMN313DLT-7DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN313DLT-7DICT-ND
Single FETs, MOSFETs DMN313DLT-7DICT-ND
N-Channel 30V 270mA (Ta) 280mW (Ta) Surface Mount SOT-523

N-Channel 30V 270mA (Ta) 280mW (Ta) Surface Mount SOT-523

Buy Now Datasheet
Single FETs, MOSFETs - DMN313DLT-7DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN313DLT-7DIDKR-ND
Single FETs, MOSFETs DMN313DLT-7DIDKR-ND
N-Channel 30V 270mA (Ta) 280mW (Ta) Surface Mount SOT-523

N-Channel 30V 270mA (Ta) 280mW (Ta) Surface Mount SOT-523

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN313DLT-7
MOSFET DMN313DLT-7
MOSFET FET BVDSS 25V 30V N-Ch Enh Mode 0.5nc

MOSFET FET BVDSS 25V 30V N-Ch Enh Mode 0.5nc

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN313DLT-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN313DLT-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN313DLT-7
MOSFET N-CH 30V 270MA SOT523

MOSFET N-CH 30V 270MA SOT523

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
DMN313DLT-7
Triode/MOS Tube/Transistor >> MOSFETs DMN313DLT-7
30V 270mA 2Ω@4V,10mA 280mW 1.5V@250uA N Channel SOT-523 MOSFETs ROHS

30V 270mA 2Ω@4V,10mA 280mW 1.5V@250uA N Channel SOT-523 MOSFETs ROHS

Supplier's Site Datasheet
Mosfet, N-Ch, 30V, 0.27A, Sot-523 Rohs Compliant Diodes Inc. - 28AK8567 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 0.27A, Sot-523 Rohs Compliant Diodes Inc.
28AK8567
Mosfet, N-Ch, 30V, 0.27A, Sot-523 Rohs Compliant Diodes Inc. 28AK8567
MOSFET, N-CH, 30V, 0.27A, SOT-523 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 0.27A, SOT-523 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033763-DMN313DLT-7 DMN313DLT-7DITR-ND DMN313DLT-7 DMN313DLT-7 DMN313DLT-7 28AK8567
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN313DLT-7 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Mosfet, N-Ch, 30V, 0.27A, Sot-523 Rohs Compliant Diodes Inc.
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 280 milliwatts 280 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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