DIODES Incorporated FET, MOSFET Arrays DMN3135LVTQ-7

The DMN3135LVTQ-7 is a dual N-channel enhancement mode MOSFET in a TSOT26 package, designed for automotive applications requiring AEC-Q101 qualification. It has a drain-source voltage rating of 30V, with on-resistance of 60mΩ at VGS = 10V and 100mΩ at VGS = 4.5V. The device supports continuous drain currents of 3.5A at VGS = 10V and 2.8A at VGS = 4.5V, with a maximum pulsed drain current of 25A. It features low input capacitance (305pF), fast switching, and is RoHS compliant with a UL 94 V-0 flammability rating. The thermal resistance from junction to ambient is 109°C/W on a standard PCB. The part is a tape and reel packaged variant of the DMN3135LVTQ series, with identical electrical and thermal characteristics, supplied in 3000-piece reels.