MOSFET 2N-CH 30V 3.5A TSOT26 Product overview: DMN3135LVT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3135LVT-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 840mW Surface Mount TSOT-23
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 840mW Surface Mount TSOT-23
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 840mW Surface Mount TSOT-23
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033762-DMN3135LVT-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN3135LVT
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TSOT-26
Maximum Power Dissipation: 840mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.5A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 4.1nC @ 4.5V
Max Input Capacitance: 305pF @ 15V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.1A, 10V
Alternative Parts (Cross-Reference): Si3932DV; Si3932DV-T1-GE3; AP2626GY-HF-3TR;
Introduction Date: November 23, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 3.5A TSOT26
MOSFET, DUAL N-CH, 30V, 3.5A, TSOT26; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; PowerRoHS Compliant: Yes
MOSFET, DUAL N-CH, 30V, 3.5A, TSOT26; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; PowerRoHS Compliant: Yes
MOSFET MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K
MOSFET 2N-CH 30V 3.5A TSOT26
MOSFET 2N-CH 30V 3.5A TSOT26
30V 3.5A 60mΩ@10V,3.1A 840mW 2.2V@250uA 2 N-Channel TSOT-23-6 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMN3135LVT-7 | DMN3135LVT-7DICT-ND | 1033762-DMN3135LVT-7 | 233-DMN3135LVT-7 | 07AH3772 | DMN3135LVT-7 | DMN3135LVT-7 | DMN3135LVT-7 | DMN3135LVT-7 |
| Product Name | 30V 3.5A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3135LVT-7 | MOSFET 2N-CH 30V 3.5A TSOT26 | Mosfet, Dual N-Ch, 30V, 3.5A, Tsot26; Transistor Polarity Diodes Inc. | MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| PD | 1.27 milliwatts | 840 milliwatts | 840 milliwatts | 840 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
