DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3112SSS-13 DMN3112SSS-13

Manufacturer: Diodes Incorporated
Win Source Part Number: 014437-DMN3112SSS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Input Capacitance: 268pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 57 mOhm @ 5.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 6A 8SOP Product overview: DMN3112SSS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3112SSS-13 can be used for catalog matching and distributor lookup.

N-Channel 30V 6A (Ta) 2.5W (Ta) Surface Mount 8-SOP