DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3110S-7 DMN3110S-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033761-DMN3110S-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 740mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.6nC @ 10V Max Input Capacitance: 305.8pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 73 mOhm @ 3.1mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3110S-7 - 1033761-DMN3110S-7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMN3110S-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - DMN3110S-7DIDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN3110S-7DITR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN3110S-7DICT-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 30V, 2.5A, Sot-23 Rohs Compliant Diodes Inc. - 28AK8565 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3110S-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033761-DMN3110S-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 740mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.6nC @ 10V Max Input Capacitance: 305.8pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 73 mOhm @ 3.1mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3110S-7 - 1033761-DMN3110S-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3110S-7
1033761-DMN3110S-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3110S-7 1033761-DMN3110S-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033761-DMN3110S-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 740mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.6nC @ 10V Max Input Capacitance: 305.8pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 73 mOhm @ 3.1mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033761-DMN3110S-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 740mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8.6nC @ 10V
Max Input Capacitance: 305.8pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 73 mOhm @ 3.1mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - DMN3110S-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN3110S-7
Single FETs, MOSFETs DMN3110S-7
MOSFET N-CH 30V 2.5A SOT-23

MOSFET N-CH 30V 2.5A SOT-23

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN3110S-7DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3110S-7DIDKR-ND
Single FETs, MOSFETs DMN3110S-7DIDKR-ND
N-Channel 30V 2.5A (Ta) 740mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 2.5A (Ta) 740mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN3110S-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3110S-7DITR-ND
Single FETs, MOSFETs DMN3110S-7DITR-ND
N-Channel 30V 2.5A (Ta) 740mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 2.5A (Ta) 740mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN3110S-7DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3110S-7DICT-ND
Single FETs, MOSFETs DMN3110S-7DICT-ND
N-Channel 30V 2.5A (Ta) 740mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 2.5A (Ta) 740mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Mosfet, N-Ch, 30V, 2.5A, Sot-23 Rohs Compliant Diodes Inc. - 28AK8565 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 2.5A, Sot-23 Rohs Compliant Diodes Inc.
28AK8565
Mosfet, N-Ch, 30V, 2.5A, Sot-23 Rohs Compliant Diodes Inc. 28AK8565
MOSFET, N-CH, 30V, 2.5A, SOT-23 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 2.5A, SOT-23 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3110S-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN3110S-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN3110S-7
MOSFET N-CH 30V 2.5A SOT-23

MOSFET N-CH 30V 2.5A SOT-23

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN3110S-7
MOSFET DMN3110S-7
MOSFET MOSFET BVDSS: 25V-30 SOT23,3K

MOSFET MOSFET BVDSS: 25V-30 SOT23,3K

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033761-DMN3110S-7 DMN3110S-7 DMN3110S-7DIDKR-ND 28AK8565 DMN3110S-7 DMN3110S-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3110S-7 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 30V, 2.5A, Sot-23 Rohs Compliant Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 740 milliwatts 740 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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