DIODES Incorporated Single FETs, MOSFETs DMN3110LCP3-7

MOSFET N-CH 30V 3.2A 3DFN

MOSFET N-CH 30V 3.2A 3DFN Product overview: DMN3110LCP3-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3110LCP3-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 805268-DMN3110LCP3-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-XFDFN
Power Dissipation (Maximum): 1.38W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
Rds On (Maximum) at Id, Vgs: 69mOhm at 500mA, 8V
Gate Charge (Qg) (Maximum) at Vgs: 1.52nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 150pF at 15V
Current - Continuous Drain (Id) at 25°C: 3.2A
Vgs(th) (Maximum) at Id: 1.1V at 250μA
Maximum Vgs: 12V