Manufacturer: Diodes Incorporated
Win Source Part Number: 805268-DMN3110LCP3-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-XFDFN
Power Dissipation (Maximum): 1.38W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
Rds On (Maximum) at Id, Vgs: 69mOhm at 500mA, 8V
Gate Charge (Qg) (Maximum) at Vgs: 1.52nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 150pF at 15V
Current - Continuous Drain (Id) at 25°C: 3.2A
Vgs(th) (Maximum) at Id: 1.1V at 250μA
Maximum Vgs: 12V
MOSFET N-CH 30V 3.2A 3DFN Product overview: DMN3110LCP3-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3110LCP3-7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 3.2A 3DFN
MOSFET N-CH 30V 3.2A 3DFN
MOSFET N-CH 30V 3.2A X2DFN1006-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 805268-DMN3110LCP3-7 | 278-DMN3110LCP3-7 | DMN3110LCP3-7 | DMN3110LCP3-7 | DMN3110LCP3-7 | 233-DMN3110LCP3-7 |
| Product Name | FETs - Single - DMN3110LCP3-7 | 30V 3.2A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 3.2A X2DFN1006-3 |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||
| PD | 1380 milliwatts | 1380 milliwatts | 1380 milliwatts | 1380 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3 | Tape & Reel (TR) | 3-XFDFN | 3-XFDFN |
