Manufacturer: Diodes Incorporated
Win Source Part Number: 1033760-DMN30H4D0LFD
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 630mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 550mA (Ta)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 7.6nC @ 10V
Max Input Capacitance: 187.3pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 Ohm @ 300mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)
N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)
N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)
MOSFET N-CH 300V 550MA 6UDFN
MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
MOSFET N-CH 300V 550MA 6UDFN
MOSFET, N-CH, 300V, 0.55A, U-DFN2020 ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033760-DMN30H4D0LFDE-7 | DMN30H4D0LFDE-7DIDKR-ND | DMN30H4D0LFDE-7 | DMN30H4D0LFDE-7 | DMN30H4D0LFDE-7 | 36AJ3584 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN30H4D0LFDE-7 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 300V, 0.55A, U-Dfn2020 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 300 volts | 300 volts | ||||
| PD | 630 milliwatts | 630 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
