DIODES Incorporated Single FETs, MOSFETs DMN30H4D0LFDE-7

Description
N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)
Request a Quote Datasheet
Description
N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMN30H4D0LFDE-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN30H4D0LFDE-7DIDKR-ND
Single FETs, MOSFETs DMN30H4D0LFDE-7DIDKR-ND
N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)

N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Buy Now Datasheet
Single FETs, MOSFETs - DMN30H4D0LFDE-7DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN30H4D0LFDE-7DICT-ND
Single FETs, MOSFETs DMN30H4D0LFDE-7DICT-ND
N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)

N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Buy Now Datasheet
Single FETs, MOSFETs - DMN30H4D0LFDE-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN30H4D0LFDE-7DITR-ND
Single FETs, MOSFETs DMN30H4D0LFDE-7DITR-ND
N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)

N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Buy Now Datasheet
Single FETs, MOSFETs - DMN30H4D0LFDE-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN30H4D0LFDE-7
Single FETs, MOSFETs DMN30H4D0LFDE-7
MOSFET N-CH 300V 550MA 6UDFN

MOSFET N-CH 300V 550MA 6UDFN

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN30H4D0LFDE-7 - 1033760-DMN30H4D0LFDE-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN30H4D0LFDE-7
1033760-DMN30H4D0LFDE-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN30H4D0LFDE-7 1033760-DMN30H4D0LFDE-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033760-DMN30H4D0LFD E-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 630mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2020-6 (Type E) Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 550mA (Ta) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 7.6nC @ 10V Max Input Capacitance: 187.3pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 Ohm @ 300mA, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033760-DMN30H4D0LFDE-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 630mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 550mA (Ta)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 7.6nC @ 10V
Max Input Capacitance: 187.3pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 Ohm @ 300mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet, N-Ch, 300V, 0.55A, U-Dfn2020 Rohs Compliant Diodes Inc. - 36AJ3584 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 0.55A, U-Dfn2020 Rohs Compliant Diodes Inc.
36AJ3584
Mosfet, N-Ch, 300V, 0.55A, U-Dfn2020 Rohs Compliant Diodes Inc. 36AJ3584
MOSFET, N-CH, 300V, 0.55A, U-DFN2020 ROHS COMPLIANT: YES

MOSFET, N-CH, 300V, 0.55A, U-DFN2020 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN30H4D0LFDE-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN30H4D0LFDE-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN30H4D0LFDE-7
MOSFET N-CH 300V 550MA 6UDFN

MOSFET N-CH 300V 550MA 6UDFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET

MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMN30H4D0LFDE-7DIDKR-ND DMN30H4D0LFDE-7 1033760-DMN30H4D0LFDE-7 36AJ3584 DMN30H4D0LFDE-7 DMN30H4D0LFDE-7
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN30H4D0LFDE-7 Mosfet, N-Ch, 300V, 0.55A, U-Dfn2020 Rohs Compliant Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type 6-PowerUDFN 6-PowerUDFN SOT3; U-DFN2020-6 (Type E) TO-3 6-PowerUDFN
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 300 volts 300 volts
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