DIODES Incorporated 30V 4.2A MOSFET Transistor DMN3070SSN-7

MOSFET N-CH 30V 4.2A SC59 Product overview: DMN3070SSN-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3070SSN-7 can be used for catalog matching and distributor lookup.

N-Channel 30V 4.2A (Ta) 780mW (Ta) Surface Mount SC-59-3

N-Channel 30V 4.2A (Ta) 780mW (Ta) Surface Mount SC-59-3

N-Channel 30V 4.2A (Ta) 780mW (Ta) Surface Mount SC-59-3

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033758-DMN3070SSN-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 780mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-59
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.2A (Ta)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 13.2nC @ 10V
Max Input Capacitance: 697pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance