DIODES Incorporated Single FETs, MOSFETs DMN3069L-13

The DMN3069L-13 is an N-channel enhancement mode MOSFET in an SOT23 package, designed for high-efficiency power management applications such as load switching and DC-DC conversion. It has a drain-source voltage rating of 30 V, with a maximum on-resistance of 30 mΩ at VGS = 10 V and 40 mΩ at VGS = 4.5 V. The continuous drain current is 5.3 A at TA = 25°C and 4.3 A at TA = 70°C. The device features a low gate threshold voltage of 1.0 V to 1.8 V, low input capacitance of 309 pF, and is ESD protected. It is RoHS compliant, halogen and antimony free, and has a moisture sensitivity level of 1 per J-STD-020. The package is molded plastic with a 94V-0 flammability rating. The part is supplied in a 10,000/tape and reel configuration.