DIODES Incorporated Single FETs, MOSFETs DMN3066LVTQ-13

The DMN3066LVTQ-13 is an N-channel enhancement mode MOSFET in a TSOT26 package, designed for automotive applications requiring AEC-Q101 qualification and PPAP capability. It features a drain-source voltage rating of 30 V, a continuous drain current of 3.6 A at 25°C with VGS = 4.5 V, and on-resistance values of 67 mΩ at 4.5 V, 70 mΩ at 4.0 V, and 98 mΩ at 2.5 V. The device has a total power dissipation of 1.3 W when mounted on a 1-inch square copper plate, with a junction-to-ambient thermal resistance of 93 °C/W. It is RoHS compliant, halogen- and antimony-free, and meets UL 94 V-0 flammability rating. Package dimensions follow TSOT26 specifications with a weight of approximately 0.013 grams.