DIODES Incorporated Single FETs, MOSFETs DMN3066LVT-7

The DMN3066LVT-7 is an N-channel enhancement mode MOSFET in a TSOT26 package, designed for high-efficiency power-management applications such as DC-DC converters and backlighting. It has a drain-source voltage rating of 30 V, with on-resistance of 67 mΩ at VGS = 4.5 V and 3.6 A, and 98 mΩ at VGS = 2.5 V and 3.0 A. The device features an ESD-protected gate, low input capacitance, and fast switching, with a total gate charge of 4.0 nC. It is rated for continuous drain current up to 3.6 A at 25°C and 2.9 A at 70°C, with a maximum power dissipation of 1.3 W when mounted on a 1-inch square copper plate. Thermal resistance junction-to-ambient is 93 °C/W under that condition. The MOSFET is lead-free, RoHS compliant, halogen- and antimony-free, and qualified to AEC-Q100/101/104/200 standards. It is supplied in tape and reel packaging with 3,000 units per reel.