DIODES Incorporated Single FETs, MOSFETs DMN3066LVT-13

N-channel enhancement mode MOSFET in a TSOT26 package, designed for high-efficiency power-management applications such as DC-DC converters and backlighting. It has a drain-source voltage rating of 30 V, with on-resistance of 67 mΩ at VGS = 4.5 V and 3.6 A, and 98 mΩ at VGS = 2.5 V and 3.0 A. The device features an ESD-protected gate, low input/output leakage, and fast switching speed. It is RoHS compliant, halogen- and antimony-free, and meets AEC-Q100/101/104/200 qualifications for automotive applications. Thermal resistance is 93 °C/W when mounted on a 1 in² copper plate, and operating temperature ranges from -55 °C to +150 °C. The part is offered in tape and reel packaging with 10,000 units per reel.