MOSFET N-CH 30V 4A SOT323
Win Source Part Number: 1180848-DMN3065LW-13
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 770mW (Ta)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN3065LW-13.; DMN3065LW13;
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: DMN3065LW-13DICT,DMN
Base Product Number: DMN3065
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
N-Channel 30V 4A (Ta) 770mW (Ta) Surface Mount SOT-323
N-Channel 30V 4A (Ta) 770mW (Ta) Surface Mount SOT-323
N-Channel 30V 4A (Ta) 770mW (Ta) Surface Mount SOT-323
MOSFET N-CH 30V 4A SOT323 Product overview: DMN3065LW-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3065LW-13 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 4A SOT323
MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC
MOSFET, N-CH, 30V, 4A, SOT-323 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN3065LW-13 | 1180848-DMN3065LW-13 | DMN3065LW-13DIDKR-ND | 278-DMN3065LW-13 | DMN3065LW-13 | DMN3065LW-13 | 28AK8560 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 30V 4A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 4A, Sot-323 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 4000 milliamps | ||||||
| PD | 770 milliwatts | 770 milliwatts | 770 milliwatts |
