DIODES Incorporated 30V 3.9A MOSFET Transistor DMN3060LCA3-7

MOSFET N-CH 30V 3.9A X4DSN1006-3 Product overview: DMN3060LCA3-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3060LCA3-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 3.9A X4DSN1006-3

MOSFET N-CH 30V 3.9A X4DSN1006-3

N-Channel 30V 3.9A (Ta) 790mW Surface Mount X4-DSN1006-3

MOSFET N-CH 30V 3.9A X4DSN1006-3

Win Source Part Number: 1381904-DMN3060LCA3-7
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Package: Tape & Reel
Standard Package: 10,000 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 790mW
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: X4-DSN1006-3
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Base Product Number: DMN3060
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Moisture Sensitivity Level (MSL): 1 (Unlimited)