MOSFET N-CH 30V 4A SOT23 Product overview: DMN3053L-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3053L-7 can be used for catalog matching and distributor lookup.
N-Channel 30V 4A (Ta) 760mW (Ta) Surface Mount SOT-23-3
N-Channel 30V 4A (Ta) 760mW (Ta) Surface Mount SOT-23-3
N-Channel 30V 4A (Ta) 760mW (Ta) Surface Mount SOT-23-3
MOSFET N-CH 30V 4A SOT23
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033756-DMN3053L-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 760mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 17.2nC @ 10V
Max Input Capacitance: 676pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 4A SOT23
MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
30V 4A 45mΩ@10V,4A 760mW 1.4V@250uA N Channel SOT-23 MOSFETs ROHS
MOSFET, N-CH, 30V, 4A, SOT-23 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN3053L-7 | DMN3053L-7DICT-ND | DMN3053L-7 | 1033756-DMN3053L-7 | DMN3053L-7 | DMN3053L-7 | DMN3053L-7 | 28AK8559 |
| Product Name | 30V 4A SOT23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3053L-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 30V, 4A, Sot-23 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| PD | 1.2 milliwatts | 760 milliwatts | 760 milliwatts | 760 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
