DIODES Incorporated Single FETs, MOSFETs DMN3052L-7

Description
MOSFET N-CH 30V 5.4A SOT23-3
Request a Quote Datasheet
Description
MOSFET N-CH 30V 5.4A SOT23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMN3052L-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN3052L-7
Single FETs, MOSFETs DMN3052L-7
MOSFET N-CH 30V 5.4A SOT23-3

MOSFET N-CH 30V 5.4A SOT23-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3052L-7 - 014436-DMN3052L-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3052L-7
014436-DMN3052L-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3052L-7 014436-DMN3052L-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014436-DMN3052L-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.4A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Input Capacitance: 555pF @ 5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 5.8A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 014436-DMN3052L-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.4A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Input Capacitance: 555pF @ 5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 32 mOhm @ 5.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - DMN3052LDITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3052LDITR-ND
Single FETs, MOSFETs DMN3052LDITR-ND
N-Channel 30V 5.4A (Ta) 1.4W (Ta) Surface Mount SOT-23-3

N-Channel 30V 5.4A (Ta) 1.4W (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3052L-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN3052L-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN3052L-7
MOSFET N-CH 30V 5.4A SOT23-3

MOSFET N-CH 30V 5.4A SOT23-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number DMN3052L-7 014436-DMN3052L-7 DMN3052LDITR-ND DMN3052L-7
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3052L-7 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 5400 milliamps
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