MOSFET 2N-CH 30V 5.5A 8VDFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 803641-DMN3035LWN-7
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Power - Max: 770mW
Supplier Device Package: V-DFN3020-8
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 35mOhm at 4.8A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 9.9nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 399pF at 15V
Current - Continuous Drain (Id) at 25°C: 5.5A
Vgs(th) (Maximum) at Id: 2V at 250μA
MOSFET 2N-CH 30V 5.5A 8VDFN Product overview: DMN3035LWN-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3035LWN-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 770mW Surface Mount V-DFN3020-8 (Type N)
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 770mW Surface Mount V-DFN3020-8 (Type N)
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 770mW Surface Mount V-DFN3020-8 (Type N)
MOSFET 2N-CH 30V 5.5A 8VDFN
MOSFET, DUAL, N-CH, 30V, 5.5A ROHS COMPLIANT: YES
MOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN3035LWN-7 | 803641-DMN3035LWN-7 | 289-DMN3035LWN-7 | DMN3035LWN-7DIDKR-ND | DMN3035LWN-7 | 28AK8555 | DMN3035LWN-7 |
| Product Name | FET, MOSFET Arrays | FETs - Arrays - DMN3035LWN-7 | 30V 5.5A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N-Ch, 30V, 5.5A Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 5500 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
