DIODES Incorporated FET, MOSFET Arrays DMN3033LSD-13

Description
MOSFET 2N-CH 30V 6.9A 8-SOIC
Request a Quote Datasheet
Description
MOSFET 2N-CH 30V 6.9A 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMN3033LSD-13 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN3033LSD-13
FET, MOSFET Arrays DMN3033LSD-13
MOSFET 2N-CH 30V 6.9A 8-SOIC

MOSFET 2N-CH 30V 6.9A 8-SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3033LSD-13 - 080576-DMN3033LSD-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3033LSD-13
080576-DMN3033LSD-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3033LSD-13 080576-DMN3033LSD-13
Manufacturer: Diodes Incorporated Win Source Part Number: 080576-DMN3033LSD-13 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 725pF @ 15V Maximum Rds On at Id,Vgs: 20 mOhm @ 6.9A, 10V Alternative Parts (Cross-Reference): SI4214DDY-T1-GE3; DMN3033LSD; AO4842; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 080576-DMN3033LSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 725pF @ 15V
Maximum Rds On at Id,Vgs: 20 mOhm @ 6.9A, 10V
Alternative Parts (Cross-Reference): SI4214DDY-T1-GE3; DMN3033LSD; AO4842;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 6.9A MOSFET Transistor
289-DMN3033LSD-13
30V 6.9A MOSFET Transistor 289-DMN3033LSD-13
MOSFET 2N-CH 30V 6.9A 8SO Product overview: DMN3033LSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3033LSD-13 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 6.9A 8SO Product overview: DMN3033LSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3033LSD-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - 31-DMN3033LSD-13DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN3033LSD-13DKR-ND
FET, MOSFET Arrays 31-DMN3033LSD-13DKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN3033LSD-13TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN3033LSD-13TR-ND
FET, MOSFET Arrays 31-DMN3033LSD-13TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN3033LSD-13CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN3033LSD-13CT-ND
FET, MOSFET Arrays 31-DMN3033LSD-13CT-ND
Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2W Surface Mount 8-SO

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET NMOS-DUAL

MOSFET NMOS-DUAL

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3033LSD-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN3033LSD-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN3033LSD-13
MOSFET 2N-CH 30V 6.9A 8SO

MOSFET 2N-CH 30V 6.9A 8SO

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMN3033LSD-13 080576-DMN3033LSD-13 289-DMN3033LSD-13 31-DMN3033LSD-13DKR-ND DMN3033LSD-13 DMN3033LSD-13
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3033LSD-13 30V 6.9A MOSFET Transistor FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 6900 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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3 suppliers