MOSFET 2N-CH 30V 6.2A U-DFN2020
MOSFET 2N-CH 30V 6.2A 6UDFN Product overview: DMN3032LFDBQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3032LFDBQ-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 6.2A 1W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 30V 6.2A 1W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 30V 6.2A 1W Surface Mount U-DFN2020-6 (Type B)
MOSFET 2N-CH 30V 6.2A 6UDFN
MOSFET, DUAL, N-CH, 30V, 6.2A ROHS COMPLIANT: YES
MOSFET Dual N-Ch Enh FET 30V 20Vgss 1.0W
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN3032LFDBQ-7 | 289-DMN3032LFDBQ-7 | DMN3032LFDBQ-7DICT-ND | DMN3032LFDBQ-7 | 28AK8552 | DMN3032LFDBQ-7 |
| Product Name | FET, MOSFET Arrays | 30V 6.2A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N-Ch, 30V, 6.2A Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 6200 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
