Mosfet Array 2 N-Channel (Dual) 30V 6.2A 1W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 30V 6.2A 1W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 30V 6.2A 1W Surface Mount U-DFN2020-6 (Type B)
Manufacturer: Diodes Incorporated
Win Source Part Number: 868996-DMN3032LFDB-7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) 30V 6.2A 1W Surface Mount U-DFN2020-6 (Type B)
Package: 6-UDFN Exposed Pad
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMN3032
Categories: Discrete Semiconductor Products
Case / Package: U-DFN2020-6 (Type B)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 32 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMN3032LFDB-7-ND, DMN3032LFDB-7DICT, DMN3032LFDB-7DIDKR, DMN3032LFDB-7DITR
MOSFET 2N-CH 30V 6.2A 6UDFN Product overview: DMN3032LFDB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3032LFDB-7 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 6.2A UDFN2020-6
MOSFET, DUAL N-CH, 30V, 6.2A, U-DFN2020 ROHS COMPLIANT: YES
30V 6.2A 30mΩ@10V,5.8A 1W 2V@250uA 2 N-Channel UDFN2020-6 MOSFETs ROHS
MOSFET 2N-CH 30V 6.2A 6UDFN
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN3032LFDB-7DITR-ND | 868996-DMN3032LFDB-7 | 289-DMN3032LFDB-7 | DMN3032LFDB-7 | 36AJ3587 | DMN3032LFDB-7 | DMN3032LFDB-7 | DMN3032LFDB-7 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3032LFDB-7 | 30V 6.2A MOSFET Transistor | FET, MOSFET Arrays | Mosfet, Dual N-Ch, 30V, 6.2A, U-Dfn2020 Rohs Compliant Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | 6-UDFN Exposed Pad | SOT3; U-DFN2020-6 (Type B) | Tape & Reel (TR) | 6-UDFN Exposed Pad | TO-3 | |||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
