DIODES Incorporated Single FETs, MOSFETs DMN3032LE-13

Description
MOSFET N-CH 30V 5.6A SOT223
Request a Quote Datasheet
Description
MOSFET N-CH 30V 5.6A SOT223
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMN3032LE-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN3032LE-13
Single FETs, MOSFETs DMN3032LE-13
MOSFET N-CH 30V 5.6A SOT223

MOSFET N-CH 30V 5.6A SOT223

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN3032LE-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3032LE-13DITR-ND
Single FETs, MOSFETs DMN3032LE-13DITR-ND
N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223-3

N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN3032LE-13DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3032LE-13DICT-ND
Single FETs, MOSFETs DMN3032LE-13DICT-ND
N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223-3

N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN3032LE-13DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3032LE-13DIDKR-ND
Single FETs, MOSFETs DMN3032LE-13DIDKR-ND
N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223-3

N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3032LE-13 - 1033753-DMN3032LE-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3032LE-13
1033753-DMN3032LE-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3032LE-13 1033753-DMN3032LE-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033753-DMN3032LE-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 11.3nC @ 10V Max Input Capacitance: 498pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 3.2A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033753-DMN3032LE-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.6A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 11.3nC @ 10V
Max Input Capacitance: 498pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 3.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
DMN3032LE-13
Triode/MOS Tube/Transistor >> MOSFETs DMN3032LE-13
30V 5.6A 1.8W 29mΩ@10V,3.2A 2V@250uA N Channel SOT-223 MOSFETs ROHS

30V 5.6A 1.8W 29mΩ@10V,3.2A 2V@250uA N Channel SOT-223 MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC

MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3032LE-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN3032LE-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN3032LE-13
MOSFET N-CH 30V 5.6A SOT223

MOSFET N-CH 30V 5.6A SOT223

Supplier's Site
Mosfet, N-Ch, 30V, 15.4A, Sot-223 Rohs Compliant Diodes Inc. - 28AK8551 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 15.4A, Sot-223 Rohs Compliant Diodes Inc.
28AK8551
Mosfet, N-Ch, 30V, 15.4A, Sot-223 Rohs Compliant Diodes Inc. 28AK8551
MOSFET, N-CH, 30V, 15.4A, SOT-223 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 15.4A, SOT-223 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMN3032LE-13 DMN3032LE-13DITR-ND 1033753-DMN3032LE-13 DMN3032LE-13 DMN3032LE-13 DMN3032LE-13 28AK8551
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3032LE-13 Triode/MOS Tube/Transistor >> MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 15.4A, Sot-223 Rohs Compliant Diodes Inc.
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 5600 milliamps
PD 1800 milliwatts 1800 milliwatts 1800 milliwatts
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