MOSFET N-CH 30V 5.6A SOT223 Product overview: DMN3032LE-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3032LE-13 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033753-DMN3032LE-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.6A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 11.3nC @ 10V
Max Input Capacitance: 498pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 3.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 5.6A SOT223
N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223-3
N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223-3
N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223-3
30V 5.6A 1.8W 29mΩ@10V,3.2A 2V@250uA N Channel SOT-223 MOSFETs ROHS
MOSFET N-CH 30V 5.6A SOT223
MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC
MOSFET, N-CH, 30V, 15.4A, SOT-223 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN3032LE-13 | 1033753-DMN3032LE-13 | DMN3032LE-13 | DMN3032LE-13DITR-ND | DMN3032LE-13 | DMN3032LE-13 | DMN3032LE-13 | 28AK8551 |
| Product Name | 30V 5.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3032LE-13 | Single FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 15.4A, Sot-223 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| PD | 14 milliwatts | 1800 milliwatts | 1800 milliwatts | 1800 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
