DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3030LSS DMN3030LSS

Manufacturer: Diodes Incorporated Win Source Part Number: 09801-DMN3030LSS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 741pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 18 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance