DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3030LSS DMN3030LSS

Manufacturer: Diodes Incorporated
Win Source Part Number: 09801-DMN3030LSS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 741pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 9A 8-SOIC Product overview: DMN3030LSS from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9A, SOIC, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-DMN3030LSS can be used for catalog matching and distributor lookup.