DIODES Incorporated 30V 5.3A MOSFET Transistor DMN3030LFG-7

Description
MOSFET N-CH 30V 5.3A PWRDI3333-8 Product overview: DMN3030LFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3030LFG-7 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
MOSFET N-CH 30V 5.3A PWRDI3333-8 Product overview: DMN3030LFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3030LFG-7 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
30V 5.3A MOSFET Transistor
278-DMN3030LFG-7
30V 5.3A MOSFET Transistor 278-DMN3030LFG-7
MOSFET N-CH 30V 5.3A PWRDI3333-8 Product overview: DMN3030LFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3030LFG-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 5.3A PWRDI3333-8 Product overview: DMN3030LFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3030LFG-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN3030LFG-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN3030LFG-7
Single FETs, MOSFETs DMN3030LFG-7
MOSFET N-CH 30V 5.3A PWRDI3333-8

MOSFET N-CH 30V 5.3A PWRDI3333-8

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3030LFG-7 - 1033752-DMN3030LFG-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3030LFG-7
1033752-DMN3030LFG-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3030LFG-7 1033752-DMN3030LFG-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033752-DMN3030LFG-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 900mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.3A (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 17.4nC @ 10V Max Input Capacitance: 751pF @ 10V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033752-DMN3030LFG-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 900mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 17.4nC @ 10V
Max Input Capacitance: 751pF @ 10V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS

MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3030LFG-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN3030LFG-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN3030LFG-7
MOSFET N-CH 30V 5.3A PWRDI3333-8

MOSFET N-CH 30V 5.3A PWRDI3333-8

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-DMN3030LFG-7 DMN3030LFG-7 1033752-DMN3030LFG-7 DMN3030LFG-7 DMN3030LFG-7
Product Name 30V 5.3A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3030LFG-7 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
PD 900 milliwatts 900 milliwatts 900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) 8-PowerVDFN SOT3; PowerDI3333-8 8-PowerVDFN
Unlock Full Specs
to access all available technical data

Similar Products

DC - 20 GHz, 800 um Discrete GaAs pHEMT Die - QPD2080D - Qorvo
Specs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 800 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
View Details
3 suppliers
GaAs Fet Switches - KCB820 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 6000 MHz
View Details
Single IGBTs - 448-AIKW75N60CTXKSA1-ND - DigiKey
Infineon Technologies AG
Specs
TJ -40 to 175 C (-40 to 347 F)
Package Type TO-247; TO-247-3
Packing Method Tube
View Details
6 suppliers