MOSFET N-CH 30V 25A POWERDI3333 Product overview: DMN3025LFV-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3025LFV-13 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1376912-DMN3025LFV-1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UX)
Base Product Number: DMN3025
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Power Dissipation (Max): 900mW (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
N-Channel 30V 25A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8 (Type UX)
N-Channel 30V 25A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8 (Type UX)
N-Channel 30V 25A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8 (Type UX)
MOSFET N-CH 30V 25A POWERDI3333
MOSFET N-CH 30V 25A POWERDI3333
MOSFET, N-CH, 30V, 25A, POWERDI 3333 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN3025LFV-13 | 1376912-DMN3025LFV-13 | DMN3025LFV-13DITR-ND | DMN3025LFV-13 | DMN3025LFV-13 | 28AK8546 | DMN3025LFV-13 |
| Product Name | 30V 25A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 25A, Powerdi 3333 Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 900 milliwatts | 900 milliwatts | 900 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
