MOSFET N-CH 30V 9.9A 6UDFN
MOSFET N-CH 30V 9.9A 6UDFN Product overview: DMN3025LFDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3025LFDF-7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 9.9A 6UDFN
N-Channel 30V 9.9A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)
MOSFET N-CH 30V 9.9A 6UDFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 868994-DMN3025LFDF-7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 9.9A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)
Package: 6-UDFN Exposed Pad
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMN3025
Categories: Discrete Semiconductor Products
Case / Package: U-DFN2020-6 (Type F)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
Estimated Pruduction Lead Time: 31 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET, AEC-Q101, N-CH, 30V, UDFN2020; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0205ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 9.9A 6UDFN
MOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN3025LFDF-7 | 278-DMN3025LFDF-7 | 31-DMN3025LFDF-7CT-ND | 868994-DMN3025LFDF-7 | 12AC0706 | DMN3025LFDF-7 | DMN3025LFDF-7 |
| Product Name | Single FETs, MOSFETs | 30V 9.9A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3025LFDF-7 | Mosfet, Aec-Q101, N-Ch, 30V, Udfn2020; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 9900 milliamps | 8300 milliamps | |||||
| PD | 2100 milliwatts | 2.1 milliwatts |
