The DMN3022LDG-13 is a 30V synchronous N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a low on-resistance of 22m,Ѷ and 8m,Ѷ at a gate-source voltage of 5V and a drain current of 10A for its two channels, making it suitable for DC-DC converters and power management functions. The device has a maximum continuous drain current of 15A at a case temperature of 25¬8C and can handle pulsed drain currents up to 100A. The MOSFET is housed in a PowerDI3333-8 (Type D) package, which is compact and suitable for surface mount technology. It is compliant with RoHS standards and is halogen and antimony free, indicating its environmentally friendly design. The operating temperature range is from -55¬8C to +150¬8C, providing versatility for various applications. The device also exhibits fast switching speeds and low input capacitance, enhancing its performance in dynamic applications. Engineers considering this product should note its suitability for applications requiring efficient power management and its compliance with environmental regulations.
Mosfet Array 2 N-Channel (Dual) 30V 7.6A (Ta), 15A (Tc) 1.96W (Ta) Surface Mount PowerDI3333-8 (Type D)
MOSFET 2N-CH 30V 7.6A PWRDI3333 Product overview: DMN3022LDG-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3022LDG-13 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1055765-DMN3022LDG-1
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
Power - Max: 1.96W (Ta)
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CSD87331Q3DDMN3022LD
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMN3022
MOSFET 2N-CH 30V 7.6A PWRDI3333
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Acme Chip Technology Co., Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN3022LDG-13-ND | 289-DMN3022LDG-13 | 1055765-DMN3022LDG-13 | DMN3022LDG-13 | DMN3022LDG-13 |
| Product Name | FET, MOSFET Arrays | 30V 7.6A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | 8-PowerLDFN | Tape & Reel (TR) | SOT3 | ||
| Polarity | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts |
