DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays DMN3022LDG-13

Description
Win Source Part Number: 1055765-DMN3022LDG-1 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Power - Max: 1.96W (Ta) Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D) Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): CSD87331Q3DDMN3022LD G13; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Base Product Number: DMN3022
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Description
Win Source Part Number: 1055765-DMN3022LDG-1 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Power - Max: 1.96W (Ta) Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D) Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): CSD87331Q3DDMN3022LD G13; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Base Product Number: DMN3022
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Datasheet
Datasheet Summary
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The DMN3022LDG-13 is a 30V synchronous N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a low on-resistance of 22m,Ѷ and 8m,Ѷ at a gate-source voltage of 5V and a drain current of 10A for its two channels, making it suitable for DC-DC converters and power management functions. The device has a maximum continuous drain current of 15A at a case temperature of 25¬8C and can handle pulsed drain currents up to 100A. The MOSFET is housed in a PowerDI3333-8 (Type D) package, which is compact and suitable for surface mount technology. It is compliant with RoHS standards and is halogen and antimony free, indicating its environmentally friendly design. The operating temperature range is from -55¬8C to +150¬8C, providing versatility for various applications. The device also exhibits fast switching speeds and low input capacitance, enhancing its performance in dynamic applications. Engineers considering this product should note its suitability for applications requiring efficient power management and its compliance with environmental regulations.

Datasheet Summary
Powered by GS/AI

The DMN3022LDG-13 is a 30V synchronous N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a low on-resistance of 22m,Ѷ and 8m,Ѷ at a gate-source voltage of 5V and a drain current of 10A for its two channels, making it suitable for DC-DC converters and power management functions. The device has a maximum continuous drain current of 15A at a case temperature of 25¬8C and can handle pulsed drain currents up to 100A. The MOSFET is housed in a PowerDI3333-8 (Type D) package, which is compact and suitable for surface mount technology. It is compliant with RoHS standards and is halogen and antimony free, indicating its environmentally friendly design. The operating temperature range is from -55¬8C to +150¬8C, providing versatility for various applications. The device also exhibits fast switching speeds and low input capacitance, enhancing its performance in dynamic applications. Engineers considering this product should note its suitability for applications requiring efficient power management and its compliance with environmental regulations.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1055765-DMN3022LDG-13 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1055765-DMN3022LDG-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1055765-DMN3022LDG-13
Win Source Part Number: 1055765-DMN3022LDG-1 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Power - Max: 1.96W (Ta) Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D) Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): CSD87331Q3DDMN3022LD G13; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Base Product Number: DMN3022

Win Source Part Number: 1055765-DMN3022LDG-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
Power - Max: 1.96W (Ta)
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CSD87331Q3DDMN3022LDG13;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMN3022

Buy Now Datasheet
FET, MOSFET Arrays - DMN3022LDG-13-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN3022LDG-13-ND
FET, MOSFET Arrays DMN3022LDG-13-ND
Mosfet Array 2 N-Channel (Dual) 30V 7.6A (Ta), 15A (Tc) 1.96W (Ta) Surface Mount PowerDI3333-8 (Type D)

Mosfet Array 2 N-Channel (Dual) 30V 7.6A (Ta), 15A (Tc) 1.96W (Ta) Surface Mount PowerDI3333-8 (Type D)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3022LDG-13 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN3022LDG-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN3022LDG-13
MOSFET 2N-CH 30V 7.6A PWRDI3333

MOSFET 2N-CH 30V 7.6A PWRDI3333

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 25V-30V

MOSFET MOSFET BVDSS: 25V-30V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1055765-DMN3022LDG-13 DMN3022LDG-13-ND DMN3022LDG-13 DMN3022LDG-13
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
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