DIODES Incorporated Single FETs, MOSFETs DMN3020UFDFQ-13

The DMN3020UFDFQ-13 is a 30V N-channel enhancement mode MOSFET in a U-DFN2020-6 package with a 4mm² PCB footprint and 0.6mm profile, designed for low-profile, high-efficiency power management applications. It features a low gate threshold voltage, fast switching speed, and an ESD-protected gate. Continuous drain current is rated at 15A at 25°C with VGS=4.5V, dropping to 10A at VGS=1.8V. On-resistance is 19mΩ at VGS=4.5V and 40mΩ at VGS=1.8V. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, with RoHS and Green compliance. Thermal resistance is 63°C/W when mounted on a 1-inch square copper plate. Moisture sensitivity is Level 1 per J-STD-020. The part is supplied in 10,000/tape-and-reel packaging.