DIODES Incorporated Single FETs, MOSFETs DMN3016LPS-13

MOSFET N-CH 30V 10.8A PWRDI5060

MOSFET N-CH 30V 10.8A PWRDI5060 Product overview: DMN3016LPS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3016LPS-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 10.8A PWRDI5060

MOSFET N-CH 30V 10.8A PWRDI5060

N-Channel 30V 10.8A (Ta) 1.18W (Ta) Surface Mount PowerDI5060-8

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033743-DMN3016LPS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.18W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI5060-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.8A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 25.1nC @ 10V
Max Input Capacitance: 1415pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance