MOSFET N-CH 30V 12.4A TO252
N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3
N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3
N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033742-DMN3016LK3-1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12.4A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 25.1nC @ 10V
Max Input Capacitance: 1415pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
MOSFET, N-CH, 30V, 37.8A, TO-252 ROHS COMPLIANT: YES
MOSFET N-CH 30V 12.4A TO252
MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN3016LK3-13 | DMN3016LK3-13DICT-ND | 1033742-DMN3016LK3-13 | 28AK8537 | DMN3016LK3-13 | DMN3016LK3-13 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3016LK3-13 | Mosfet, N-Ch, 30V, 37.8A, To-252 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 12400 milliamps |
