Manufacturer: Diodes Incorporated
Win Source Part Number: 1033742-DMN3016LK3-1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12.4A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 25.1nC @ 10V
Max Input Capacitance: 1415pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 12.4A TO252
MOSFET N-CH 30V 12.4A TO252 Product overview: DMN3016LK3-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12.4A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3016LK3-13 can be used for catalog matching and distributor lookup.
N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3
N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3
N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3
MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC
MOSFET N-CH 30V 12.4A TO252
MOSFET, N-CH, 30V, 37.8A, TO-252 ROHS COMPLIANT: YES
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033742-DMN3016LK3-13 | DMN3016LK3-13 | 278-DMN3016LK3-13 | DMN3016LK3-13DICT-ND | DMN3016LK3-13 | DMN3016LK3-13 | 28AK8537 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3016LK3-13 | Single FETs, MOSFETs | 30V 12.4A TO252 MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 37.8A, To-252 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 1600 milliwatts | 1600 milliwatts | 2.8 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
