DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3016LK3-13 DMN3016LK3-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033742-DMN3016LK3-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.4A (Ta) Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 25.1nC @ 10V Max Input Capacitance: 1415pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3016LK3-13 - 1033742-DMN3016LK3-13 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMN3016LK3-13 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - DMN3016LK3-13DICT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN3016LK3-13DIDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN3016LK3-13DITR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3016LK3-13 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 37.8A, To-252 Rohs Compliant Diodes Inc. - 28AK8537 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033742-DMN3016LK3-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.4A (Ta) Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 25.1nC @ 10V Max Input Capacitance: 1415pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3016LK3-13 - 1033742-DMN3016LK3-13 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3016LK3-13
1033742-DMN3016LK3-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3016LK3-13 1033742-DMN3016LK3-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033742-DMN3016LK3-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.4A (Ta) Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 25.1nC @ 10V Max Input Capacitance: 1415pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033742-DMN3016LK3-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12.4A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 25.1nC @ 10V
Max Input Capacitance: 1415pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - DMN3016LK3-13 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN3016LK3-13
Single FETs, MOSFETs DMN3016LK3-13
MOSFET N-CH 30V 12.4A TO252

MOSFET N-CH 30V 12.4A TO252

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN3016LK3-13DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3016LK3-13DICT-ND
Single FETs, MOSFETs DMN3016LK3-13DICT-ND
N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3

N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN3016LK3-13DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3016LK3-13DIDKR-ND
Single FETs, MOSFETs DMN3016LK3-13DIDKR-ND
N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3

N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN3016LK3-13DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3016LK3-13DITR-ND
Single FETs, MOSFETs DMN3016LK3-13DITR-ND
N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3

N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3016LK3-13 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN3016LK3-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN3016LK3-13
MOSFET N-CH 30V 12.4A TO252

MOSFET N-CH 30V 12.4A TO252

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN3016LK3-13
MOSFET DMN3016LK3-13
MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC

MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC

Buy Now Datasheet
Mosfet, N-Ch, 30V, 37.8A, To-252 Rohs Compliant Diodes Inc. - 28AK8537 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 37.8A, To-252 Rohs Compliant Diodes Inc.
28AK8537
Mosfet, N-Ch, 30V, 37.8A, To-252 Rohs Compliant Diodes Inc. 28AK8537
MOSFET, N-CH, 30V, 37.8A, TO-252 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 37.8A, TO-252 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033742-DMN3016LK3-13 DMN3016LK3-13 DMN3016LK3-13DICT-ND DMN3016LK3-13 DMN3016LK3-13 28AK8537
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3016LK3-13 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 30V, 37.8A, To-252 Rohs Compliant Diodes Inc.
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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