DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays DMN3013LDG-13

Win Source Part Number: 1055764-DMN3013LDG-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power - Max: 2.16W (Ta)
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CSD87333Q3DDMN3013LDG13;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMN3013

MOSFET 2N-CH 30V 9.5A PWRDI3333 Product overview: DMN3013LDG-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3013LDG-13 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 9.5A (Ta), 15A (Tc) 2.16W (Ta) Surface Mount PowerDI3333-8 (Type D)