DIODES Incorporated Single FETs, MOSFETs DMN3009LFV-13

Description
N-Channel 30V 60A (Tc) 2W (Ta) Surface Mount PowerDI3333-8
Request a Quote Datasheet
Description
N-Channel 30V 60A (Tc) 2W (Ta) Surface Mount PowerDI3333-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMN3009LFV-13-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN3009LFV-13-ND
Single FETs, MOSFETs DMN3009LFV-13-ND
N-Channel 30V 60A (Tc) 2W (Ta) Surface Mount PowerDI3333-8

N-Channel 30V 60A (Tc) 2W (Ta) Surface Mount PowerDI3333-8

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FETs - Single - DMN3009LFV-13 - 807551-DMN3009LFV-13 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - DMN3009LFV-13
807551-DMN3009LFV-13
FETs - Single - DMN3009LFV-13 807551-DMN3009LFV-13
Manufacturer: Diodes Incorporated Win Source Part Number: 807551-DMN3009LFV-13 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 2W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 Rds On (Maximum) at Id, Vgs: 5.5mOhm at 30A, 10V Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2000pF at 15V Current - Continuous Drain (Id) at 25°C: 60A (Tc) Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V

Manufacturer: Diodes Incorporated
Win Source Part Number: 807551-DMN3009LFV-13
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
Rds On (Maximum) at Id, Vgs: 5.5mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2000pF at 15V
Current - Continuous Drain (Id) at 25°C: 60A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V

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Sheung Wan, Hong Kong
MOSFET MOSFETBVDSS: 25V-30V

MOSFET MOSFETBVDSS: 25V-30V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN3009LFV-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN3009LFV-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN3009LFV-13
MOSFET N-CH 30V 60A POWERDI3333

MOSFET N-CH 30V 60A POWERDI3333

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMN3009LFV-13-ND 807551-DMN3009LFV-13 DMN3009LFV-13 DMN3009LFV-13
Product Name Single FETs, MOSFETs FETs - Single - DMN3009LFV-13 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type 8-PowerVDFN SOT3 42 nC @ 10 V
MOSFET Operating Mode Enhancement
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