DIODES Incorporated FETs - Single - DMN3009LFV-13 DMN3009LFV-13

Manufacturer: Diodes Incorporated
Win Source Part Number: 807551-DMN3009LFV-13
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
Rds On (Maximum) at Id, Vgs: 5.5mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2000pF at 15V
Current - Continuous Drain (Id) at 25°C: 60A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V

MOSFET N-CH 30V 60A POWERDI3333 Product overview: DMN3009LFV-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3009LFV-13 can be used for catalog matching and distributor lookup.

N-Channel 30V 60A (Tc) 2W (Ta) Surface Mount PowerDI3333-8