N-Channel 30V 17.6A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8
N-Channel 30V 17.6A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8
N-Channel 30V 17.6A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 003668-DMN3008SFG-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 900mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17.6A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 3690pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 17.6A PWRDI3333 Product overview: DMN3008SFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3008SFG-7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 17.6A PWRDI3333
MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
MOSFET, N-CH, 30V, 62A, POWERDI 3333 ROHS COMPLIANT: YES
MOSFET N-CH 30V 17.6A PWRDI3333
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN3008SFG-7DITR-ND | 003668-DMN3008SFG-7 | 278-DMN3008SFG-7 | DMN3008SFG-7 | DMN3008SFG-7 | 28AK8529 | DMN3008SFG-7 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3008SFG-7 | 30V 17.6A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 62A, Powerdi 3333 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | 8-PowerVDFN | SOT3; PowerDI3333-8 | Tape & Reel (TR) | 8-PowerVDFN | TO-3 | 8-PowerVDFN | |
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 900 milliwatts | 2.1 milliwatts | 900 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
