DIODES Incorporated FET, MOSFET Arrays DMN2991UV-7

The DMN2991UV-7 is a dual N-channel enhancement mode MOSFET in an SOT563 surface-mount package, designed for high-efficiency power management in battery-operated systems and solid-state relays. It features a 20 V drain-source voltage rating, on-resistance of 0.99 Ω at VGS = 4.5 V and 1.2 Ω at VGS = 2.5 V, and a gate threshold voltage below 1 V. The device has a continuous drain current of 0.7 A at TA = 25°C, a total power dissipation of 0.46 W with minimum pad layout, and thermal resistance of 270 °C/W. It operates from -55 °C to +150 °C, is RoHS compliant, and meets UL 94 V-0 flammability and J-STD-020 Level 1 moisture sensitivity standards. The package measures 1.60 mm × 1.60 mm with a height of 0.60 mm.