DIODES Incorporated FET, MOSFET Arrays DMN2991UV-13

The DMN2991UV-13 is a dual N-channel enhancement mode MOSFET in a SOT563 surface-mount package measuring 1.60 mm × 1.60 mm, designed for high-efficiency power management in battery-operated systems and solid-state relays. It has a drain-source voltage rating of 20 V, a gate-source voltage rating of ±8 V, and continuous drain current of 0.75 A at 25°C. The device features low on-resistance of 0.99 Ω at VGS = 4.5 V and 1.2 Ω at VGS = 2.5 V, with a gate threshold voltage below 1.0 V. It is RoHS compliant, halogen and antimony free, and has a thermal resistance of 160 °C/W when mounted on a full copper pad. The package is rated UL 94 V-0 and meets J-STD-020 Level 1 moisture sensitivity. It is supplied in a 10,000-piece tape and reel configuration.