DIODES Incorporated 20V 510MA MOSFET Transistor DMN2990UFA-7B

MOSFET N-CH 20V 510MA 3DFN Product overview: DMN2990UFA-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 510MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 510MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2990UFA-7B can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 510MA 3DFN

N-Channel 20V 510mA (Ta) 400mW (Ta) Surface Mount X2-DFN0806-3

N-Channel 20V 510mA (Ta) 400mW (Ta) Surface Mount X2-DFN0806-3

N-Channel 20V 510mA (Ta) 400mW (Ta) Surface Mount X2-DFN0806-3

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033738-DMN2990UFA-7B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-X2-DFN0806
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 510mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.5nC @ 4.5V
Max Input Capacitance: 27.6pF @ 16V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 990 mOhm @ 100mA, 4.5V
Alternative Parts (Cross-Reference): RUM002N02T2L; DMN2990UFZ-7B;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient