The DMN2990UDJ-7 is a dual N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a low on-resistance of 0.99,Ѷ at a gate-source voltage (VGS) of 4.5V and a maximum continuous drain current of 450mA at 25¬8C. The device operates with a gate threshold voltage of 1.0V maximum, making it suitable for logic level applications. This MOSFET is housed in an ultra-small SOT-963 surface mount package, measuring 1mm x 1mm, with a low profile of 0.45mm maximum height. It is ESD protected and fully compliant with RoHS standards, ensuring it is environmentally friendly. The operating temperature range is from -55¬8C to 150¬8C, which qualifies it for automotive applications under AEC-Q101 standards. The DMN2990UDJ-7 is suitable for various applications including general-purpose interfacing switches, power management functions, DC-DC converters, and analog switches. It is available in tape and reel packaging, with 10,000 pieces per reel.
MOSFET 2N-CH 20V 0.45A SOT-963
MOSFET 2N-CH 20V 0.45A SOT963 Product overview: DMN2990UDJ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.45A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2990UDJ-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 102269-DMN2990UDJ-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-963
Maximum Power Dissipation: 350mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 450mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.5nC @ 4.5V
Max Input Capacitance: 27.6pF @ 16V
Maximum Rds On at Id,Vgs: 990 mOhm @ 100mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 10k pcs
Mosfet Array 2 N-Channel (Dual) 20V 450mA 350mW Surface Mount SOT-963
Mosfet Array 2 N-Channel (Dual) 20V 450mA 350mW Surface Mount SOT-963
Mosfet Array 2 N-Channel (Dual) 20V 450mA 350mW Surface Mount SOT-963
MOSFET 2N-CH 20V 0.45A SOT963
MOSFET, DUAL, N-CH, 20V, 0.45A ROHS COMPLIANT: YES
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2990UDJ-7 | 289-DMN2990UDJ-7 | 102269-DMN2990UDJ-7 | DMN2990UDJ-7DIDKR-ND | DMN2990UDJ-7 | 28AK8525 |
| Product Name | FET, MOSFET Arrays | 20V 0.45A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2990UDJ-7 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N-Ch, 20V, 0.45A Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||
| IDSS | 450 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
