MOSFET BVDSS: 8V~24V SOT323 T&R
Win Source Part Number: 1055759-DMN2710UW-7
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Vgs (Max): ±6V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN2710UW-7DMN2710UW
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: 31-DMN2710UW-7TR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
MOSFET BVDSS: 8V~24V SOT323 T&R
MOSFET BVDSS: 8V~24V SOT323 T&R
MOSFET BVDSS: 8V~24V SOT323 T&R
MOSFET BVDSS: 8V~24V SOT323 T&R
MOSFET, N-CH, 20V, 0.9A, SOT-323 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN2710UW-7 | 1055759-DMN2710UW-7 | 31-DMN2710UW-7TR-ND | DMN2710UW-7 | 21AJ9857 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 0.9A, Sot-323 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 20 volts | ||||
| IDSS | 900 milliamps |
