DIODES Incorporated Single FETs, MOSFETs DMN2710UW-7

MOSFET BVDSS: 8V~24V SOT323 T&R

MOSFET BVDSS: 8V~24V SOT323 T&R

MOSFET BVDSS: 8V~24V SOT323 T&R

MOSFET BVDSS: 8V~24V SOT323 T&R Product overview: DMN2710UW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 24V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 24V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2710UW-7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1055759-DMN2710UW-7
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Vgs (Max): ±6V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN2710UW-7DMN2710UW7;
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: 31-DMN2710UW-7TR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V