DIODES Incorporated Single FETs, MOSFETs DMN2710UFB-7B

The DMN2710UFB-7B is an N-channel enhancement mode MOSFET in the X1-DFN1006-3 package, measuring 1.0 mm × 0.6 mm, designed for high-efficiency power management in portable electronics. It features a drain-source voltage rating of 20 V, a continuous drain current of 1.3 A at TA = +75°C, and on-resistance of 0.45 Ω at VGS = 4.5 V and 0.6 Ω at VGS = 2.5 V. The device includes ESD-protected gate, fast switching performance, and operates over a junction temperature range of -55°C to +150°C. It is RoHS compliant, halogen and antimony free, and meets UL 94 V-0 flammability rating. Packaged in 10,000/tape & reel.