DIODES Incorporated Single FETs, MOSFETs DMN2710UFB-7

The DMN2710UFB-7 is an N-channel enhancement mode MOSFET in an X1-DFN1006-3 package, measuring just 0.6mm², designed for high-efficiency power management in portable electronics. It has a drain-source voltage rating of 20V, with on-resistance of 0.45Ω at VGS=4.5V and 0.6Ω at VGS=2.5V, and continuous drain current of 1.3A at 25°C. The device features a low gate threshold voltage of 0.5V to 1.0V, ESD-protected gate, and is RoHS compliant. Thermal resistance junction-to-ambient is 96°C/W on a 2oz copper PCB with thermal vias. It operates from -55°C to +150°C and is packaged in 3,000/tape and reel.