DIODES Incorporated FET, MOSFET Arrays DMN2710UDWQ-13

Description
MOSFET 2N-CH 20V 0.8A SOT363
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Description
MOSFET 2N-CH 20V 0.8A SOT363
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Datasheet
Datasheet Summary
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The DMN2710UDWQ-13 is a dual N-channel enhancement mode MOSFET in an SOT363 package, designed for high-efficiency power management in battery-operated systems and automotive applications. It features a drain-source voltage rating of 20 V, a continuous drain current of 0.8 A at 25°C, and on-resistance values of 0.45 Ω at VGS = 4.5 V and 0.6 Ω at VGS = 2.5 V. The device is AEC-Q101 qualified, RoHS compliant, and meets UL 94 V-0 flammability standards, with a moisture sensitivity level of 1 per J-STD-020. It is supplied in a tape and reel package of 10,000 units.

Datasheet Summary
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The DMN2710UDWQ-13 is a dual N-channel enhancement mode MOSFET in an SOT363 package, designed for high-efficiency power management in battery-operated systems and automotive applications. It features a drain-source voltage rating of 20 V, a continuous drain current of 0.8 A at 25°C, and on-resistance values of 0.45 Ω at VGS = 4.5 V and 0.6 Ω at VGS = 2.5 V. The device is AEC-Q101 qualified, RoHS compliant, and meets UL 94 V-0 flammability standards, with a moisture sensitivity level of 1 per J-STD-020. It is supplied in a tape and reel package of 10,000 units.

Suppliers

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Supplier Links
FET, MOSFET Arrays - 31-DMN2710UDWQ-13TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN2710UDWQ-13TR-ND
FET, MOSFET Arrays 31-DMN2710UDWQ-13TR-ND
MOSFET 2N-CH 20V 0.8A SOT363

MOSFET 2N-CH 20V 0.8A SOT363

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 31-DMN2710UDWQ-13TR-ND
Product Name FET, MOSFET Arrays
Package Type 6-TSSOP, SC-88, SOT-363
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