Dual N-channel enhancement mode MOSFET in SOT363 package, designed for high-efficiency power management in battery-operated systems and solid-state relays. Each device has a drain-source voltage rating of 20V, continuous drain current of 0.8A at 25°C with VGS = 4.5V, and a maximum on-resistance of 0.45Ω at VGS = 4.5V. Features low gate threshold voltage, fast switching speed, and ESD protection. The package is molded plastic with UL 94 V-0 flammability rating, moisture sensitivity level 1 per J-STD-020, and a matte tin terminal finish. Complies with RoHS 3 and is halogen- and antimony-free. Thermal resistance junction-to-ambient is 256°C/W with optimal PCB layout. Operating and storage temperature range is -55°C to +150°C.
MOSFET 2N-CH 20V 0.8A SOT363
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN2710UDW-13TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 6-TSSOP, SC-88, SOT-363 |
