Manufacturer: Diodes Incorporated
Win Source Part Number: 014426-DMN26D0UT-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300mW (Ta)
Family Name: DMN26D0UT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-523
Dimension: SOT-523
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 230mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Input Capacitance: 14.1pF @ 15V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 3 Ohm @ 100mA, 4.5V
Alternative Parts (Cross-Reference): NTA4001N; NTA4001NT1; NVA4001NT1G; NTA4001NT1G;
Introduction Date: September 08, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 230MA SOT523
MOSFET N-CH 20V 230MA SOT523 Product overview: DMN26D0UT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 230MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 230MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN26D0UT-7 can be used for catalog matching and distributor lookup.
N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523
N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523
N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523
MOSFET N-CH 20V 230MA SOT523
MOSFET N-Ch -20V VDSS 230mA 300mW
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 014426-DMN26D0UT-7 | DMN26D0UT-7 | 278-DMN26D0UT-7 | DMN26D0UT-7DICT-ND | DMN26D0UT-7 | DMN26D0UT-7 | 82Y6576 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN26D0UT-7 | Single FETs, MOSFETs | 20V 230MA MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, Sot-523-3; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| PD | 300 milliwatts | 300 milliwatts | 300 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT-523 | SOT-523 | Tape & Reel (TR) | SOT-523 | TO-3 |
