DIODE Product overview: DMN26D0UFB4-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN26D0UFB4-7B can be used for catalog matching and distributor lookup.
N-Channel 20V 240mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 252618-DMN26D0UFB4-7
Category: Discrete Semiconductor Products
Family: FETs - Single
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN26D0UFB4-7B | DMN26D0UFB4-7B | 31-DMN26D0UFB4-7B-ND | 252618-DMN26D0UFB4-7B |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products |
| PD | 350 milliwatts | 350 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Bulk | 3-XFDFN | 3-XFDFN | SOT3 |
| Packing Method | Bulk | |||
| Polarity | N-Channel; N-Channel | N-Channel |
