MOSFET N-CH 25V 1.3A 3DFN Product overview: DMN2600UFB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2600UFB-7 can be used for catalog matching and distributor lookup.
N-Channel 25V 1.3A (Ta) 540mW (Ta) Surface Mount X1-DFN1006-3
N-Channel 25V 1.3A (Ta) 540mW (Ta) Surface Mount X1-DFN1006-3
N-Channel 25V 1.3A (Ta) 540mW (Ta) Surface Mount X1-DFN1006-3
MOSFET N-CH 25V 1.3A 3DFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 138953-DMN2600UFB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 540mW (Ta)
Family Name: DMN2600UFB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-DFN1006 (1.0x0.6)
Dimension: 3-UFDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.85nC @ 4.5V
Max Input Capacitance: 70.13pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 350 mOhm @ 200mA, 4.5V
Alternative Parts (Cross-Reference): DMN2600UFB;
Introduction Date: July 08, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 25V, 1.3A, X1-DFN1006 ROHS COMPLIANT: YES
MOSFET N-Ch Dual MOSFET 25V VDSS 8V VGSS
MOSFET N-CH 25V 1.3A 3DFN
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMN2600UFB-7 | DMN2600UFB-7DITR-ND | DMN2600UFB-7 | 138953-DMN2600UFB-7 | 28AK8524 | DMN2600UFB-7 | 233-DMN2600UFB-7 | DMN2600UFB-7 |
| Product Name | 25V 1.3A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2600UFB-7 | Mosfet, N-Ch, 25V, 1.3A, X1-Dfn1006 Rohs Compliant Diodes Inc. | MOSFET | MOSFET N-CH DFN1006-3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | |||||
| PD | 540 milliwatts | 540 milliwatts | 540 milliwatts | 540 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
