DIODES Incorporated 20V 600MA MOSFET Transistor DMN2550UFA-7B

MOSFET N-CH 20V 600MA 3DFN Product overview: DMN2550UFA-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 600MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 600MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2550UFA-7B can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 752928-DMN2550UFA-7B
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-XFDFN
Power Dissipation (Maximum): 360mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 600mA
Rds On (Maximum) at Id, Vgs: 450mOhm at 200mA, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 0.88nC at 4.5V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 52.5pF at 16V

MOSFET N-CH 20V 600MA 3DFN

N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount X2-DFN0806-3

MOSFET N-CH 20V 600MA 3DFN