MOSFET N-CH 20V 1A X2-DFN1006-3 Product overview: DMN2501UFB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2501UFB4-7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 1A 3DFN
N-Channel 20V 1A (Ta) 500mW (Ta) Surface Mount X2-DFN1006-3
MOSFET N-CH 20V 1A 3DFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 109031-DMN2501UFB4-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2nC @ 10V
Max Input Capacitance: 82pF @ 16V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 400 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 1A X2-DFN1006-3
MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 3K
MOSFET, N-CH, 20V, 1A, X2-DFN1006 ROHS COMPLIANT: YES
MOSFET N-CH 20V 1A X2-DFN1006-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMN2501UFB4-7 | 31-DMN2501UFB4-7DKR-ND | 109031-DMN2501UFB4-7 | DMN2501UFB4-7 | DMN2501UFB4-7 | 28AK8522 | DMN2501UFB4-7 |
| Product Name | 20V 1A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2501UFB4-7 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, 1A, X2-Dfn1006 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
